Nondestructive Readout Operation of Oxide-Thin-Film-Transistor-Based 2T-Type Nonvolatile Memory Cell

Title
Nondestructive Readout Operation of Oxide-Thin-Film-Transistor-Based 2T-Type Nonvolatile Memory Cell
Authors
Keywords
-
Journal
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 2, Pages 138-140
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2009-12-17
DOI
10.1109/led.2009.2036137

Ask authors/readers for more resources

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now