Journal
ADVANCES IN MATERIALS SCIENCE AND ENGINEERING
Volume 2011, Issue -, Pages -Publisher
HINDAWI LTD
DOI: 10.1155/2011/974906
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The electrical characteristics of aluminum (Al) doped zinc oxide (ZnO) thin film for high sensitivity humidity sensors are presented. The effects of Al doping concentration at 0 similar to 0.6 at % on the Al doped ZnO thin film properties were investigated using current-voltage measurement. The optical and structural properties were characterized using photoluminescence (PL), scanning emission microscope (SEM), and X-ray diffraction (XRD). Parameter 0.6 at % Aluminum doped show high sensitivity and suitable for humidity sensor. PL show an emissions band with two peaks centered at about 380 nm (ultra-violet (UV)) and 600 nm (green) in a room temperature. The length of the nanorods increases as the doping concentration.
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