Vapor-liquid-solid and vapor-solid growth of self-catalyzed GaAs nanowires
Published 2011 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Vapor-liquid-solid and vapor-solid growth of self-catalyzed GaAs nanowires
Authors
Keywords
-
Journal
AIP Advances
Volume 1, Issue 4, Pages 042142
Publisher
AIP Publishing
Online
2011-11-12
DOI
10.1063/1.3664133
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Self-catalyzed GaAs nanowire growth on Si-treated GaAs(100) substrates
- (2011) S. Ambrosini et al. JOURNAL OF APPLIED PHYSICS
- Metal-layer-assisted coalescence of Au nanoparticles and its effect on diameter control in vapor-liquid-solid growth of oxide nanowires
- (2011) Dong Lai Guo et al. PHYSICAL REVIEW B
- Different growth rates for catalyst-induced and self-induced GaN nanowires
- (2010) C. Chèze et al. APPLIED PHYSICS LETTERS
- Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon
- (2010) S. Plissard et al. APPLIED PHYSICS LETTERS
- A new insight on crystalline strain and defect features by STEM–ADF imaging
- (2010) V. Grillo et al. JOURNAL OF CRYSTAL GROWTH
- Effects of Gold Diffusion on n-Type Doping of GaAs Nanowires
- (2010) Michael J. Tambe et al. NANO LETTERS
- Semiconductor Nanowire: What’s Next?
- (2010) Peidong Yang et al. NANO LETTERS
- Phase Perfection in Zinc Blende and Wurtzite III−V Nanowires Using Basic Growth Parameters
- (2010) Hannah J. Joyce et al. NANO LETTERS
- Structural Phase Control in Self-Catalyzed Growth of GaAs Nanowires on Silicon (111)
- (2010) Peter Krogstrup et al. NANO LETTERS
- Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment
- (2010) X. Zhang et al. Nanoscale Research Letters
- Gold-free growth of GaAs nanowires on silicon: arrays and polytypism
- (2010) Sébastien Plissard et al. NANOTECHNOLOGY
- Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures
- (2010) D. Spirkoska et al. PHYSICAL REVIEW B
- Structural properties and energetics of intrinsic and Si-doped GaAs nanowires: First-principles pseudopotential calculations
- (2010) Nahid Ghaderi et al. PHYSICAL REVIEW B
- Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy
- (2010) G. E. Cirlin et al. PHYSICAL REVIEW B
- Preferential Interface Nucleation: An Expansion of the VLS Growth Mechanism for Nanowires
- (2008) Brent A. Wacaser et al. ADVANCED MATERIALS
- Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires
- (2008) A. Fontcuberta i Morral et al. APPLIED PHYSICS LETTERS
- Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy
- (2008) K.A. Bertness et al. JOURNAL OF CRYSTAL GROWTH
- Stacking-Faults-Free Zinc Blende GaAs Nanowires
- (2008) Hadas Shtrikman et al. NANO LETTERS
- Self-catalyzed growth of GaAs nanowires on cleaved Si by molecular beam epitaxy
- (2008) Fauzia Jabeen et al. NANOTECHNOLOGY
- Growth kinetics and crystal structure of semiconductor nanowires
- (2008) V. G. Dubrovskii et al. PHYSICAL REVIEW B
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started