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Title
Remarkably High Hole Mobility Metal-Oxide Thin-Film Transistors
Authors
Keywords
-
Journal
Scientific Reports
Volume 8, Issue 1, Pages -
Publisher
Springer Nature
Online
2018-01-11
DOI
10.1038/s41598-017-17066-x
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- (2011) V. Figueiredo et al. Journal of Display Technology
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- Material characteristics and applications of transparent amorphous oxide semiconductors
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- Optical bandgap widening of p-type Cu2O films by nitrogen doping
- (2009) Yoshitaka Nakano et al. APPLIED PHYSICS LETTERS
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