Investigating carrier localization and transfer in InGaN/GaN quantum wells with V-pits using near-field scanning optical microscopy and correlation analysis

Wafer-scale porous GaN single crystal substrates and their application in energy storage

(2016) Jiaoxian Yu et al.   CRYSTENGCOMM

Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells

(2015) R. Ivanov et al.   APPLIED PHYSICS LETTERS

Manipulation of nanoscale V-pits to optimize internal quantum efficiency of InGaN multiple quantum wells

(2015) Chiao-Yun Chang et al.   APPLIED PHYSICS LETTERS

High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells

(2015) K. Gelžinytė et al.   JOURNAL OF APPLIED PHYSICS

V-pits as Barriers to Diffusion of Carriers in InGaN/GaN Quantum Wells

(2015) Mi-Hyang Sheen et al.   JOURNAL OF ELECTRONIC MATERIALS

Structural, electronic, and optical properties ofm-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory

(2015) S. Schulz et al.   PHYSICAL REVIEW B

Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence

(2014) S. Marcinkevičius et al.   APPLIED PHYSICS LETTERS

Characterization of dislocations in MOCVD-grown GaN using a high temperature annealing method

(2014) Yuan Tian et al.   CRYSTENGCOMM

Structure and strain relaxation effects of defects in InxGa1−xN epilayers

(2014) S. L. Rhode et al.   JOURNAL OF APPLIED PHYSICS

The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

(2014) Tsung-Jui Yang et al.   JOURNAL OF APPLIED PHYSICS

Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes

(2014)   JOURNAL OF APPLIED PHYSICS

Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells

(2014) Jaekyun Kim et al.   OPTICS EXPRESS

Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra

(2013) S. Marcinkevičius et al.   APPLIED PHYSICS LETTERS

Optical properties of extended and localized states in m-plane InGaN quantum wells

(2013) S. Marcinkevičius et al.   APPLIED PHYSICS LETTERS

Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes

(2013) Sang-Heon Han et al.   APPLIED PHYSICS LETTERS

Effect of V-Shaped Pit Size on the Reverse Leakage Current of InGaN/GaN Light-Emitting Diodes

(2013) Jaekyun Kim et al.   IEEE ELECTRON DEVICE LETTERS

Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a $\{20\bar{2}1\}$ GaN Substrate Probed by Scanning Near-Field Optical Microscopy

(2012) Akio Kaneta et al.   Applied Physics Express

Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes

(2012) L. C. Le et al.   APPLIED PHYSICS LETTERS

Atomic scale characterization of GaInN/GaN multiple quantum wells in V-shaped pits

(2011) Shigetaka Tomiya et al.   APPLIED PHYSICS LETTERS

Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy

(2010) V. Liuolia et al.   APPLIED PHYSICS LETTERS

Effect of indium surfactant on stress relaxation by V-defect formation in GaN epilayers grown by metalorganic chemical vapor deposition

(2010) Dongjin Won et al.   JOURNAL OF APPLIED PHYSICS

Natural white light

(2010) Noriaki Horiuchi   Nature Photonics

Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties

(2010) H. Wang et al.   PHYSICA B-CONDENSED MATTER

Advances in group III-nitride-based deep UV light-emitting diode technology

(2010) M Kneissl et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

(2009) Q. Dai et al.   APPLIED PHYSICS LETTERS

High-Power and High-Efficiency InGaN-Based Light Emitters

(2009) Ansgar Laubsch et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Microstructures produced during the epitaxial growth of InGaN alloys

(2009) G.B. Stringfellow   JOURNAL OF CRYSTAL GROWTH

Bowing of the band gap pressure coefficient in InxGa1−xN alloys

(2008) G. Franssen et al.   JOURNAL OF APPLIED PHYSICS

Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra

(2008) A. Kaneta et al.   PHYSICAL REVIEW B