Electronic properties of MoS2/MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts
Published 2016 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Electronic properties of MoS2/MoOx interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts
Authors
Keywords
-
Journal
Scientific Reports
Volume 6, Issue 1, Pages -
Publisher
Springer Nature
Online
2016-09-26
DOI
10.1038/srep33562
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- MoS2–Titanium Contact Interface Reactions
- (2016) Stephen McDonnell et al. ACS Applied Materials & Interfaces
- Charge Mediated Reversible Metal–Insulator Transition in Monolayer MoTe2 and WxMo1–xTe2 Alloy
- (2016) Chenxi Zhang et al. ACS Nano
- Contact Metal–MoS2 Interfacial Reactions and Potential Implications on MoS2-Based Device Performance
- (2016) Christopher M. Smyth et al. Journal of Physical Chemistry C
- Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition
- (2016) Chris D. English et al. NANO LETTERS
- Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts
- (2016) Mahito Yamamoto et al. NANO LETTERS
- Near-unity photoluminescence quantum yield in MoS2
- (2015) M. Amani et al. SCIENCE
- Phase stability of transition metal dichalcogenide by competing ligand field stabilization and charge density wave
- (2015) Santosh K C et al. 2D Materials
- Hole Contacts on Transition Metal Dichalcogenides: Interface Chemistry and Band Alignments
- (2014) Stephen McDonnell et al. ACS Nano
- Air Stable p-Doping of WSe2 by Covalent Functionalization
- (2014) Peida Zhao et al. ACS Nano
- Silicon heterojunction solar cell with passivated hole selective MoOx contact
- (2014) Corsin Battaglia et al. APPLIED PHYSICS LETTERS
- The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS2 Interfaces
- (2014) Cheng Gong et al. NANO LETTERS
- MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts
- (2014) Steven Chuang et al. NANO LETTERS
- Impact of intrinsic atomic defects on the electronic structure of MoS2monolayers
- (2014) Santosh KC et al. NANOTECHNOLOGY
- Exciton Binding Energy and Nonhydrogenic Rydberg Series in MonolayerWS2
- (2014) Alexey Chernikov et al. PHYSICAL REVIEW LETTERS
- Contact research strategy for emerging molybdenum disulfide and other two-dimensional field-effect transistors
- (2014) Yuchen Du et al. APL Materials
- Electrically Driven Tuning of the Dielectric Constant in MoS2 Layers
- (2013) Elton J. G. Santos et al. ACS Nano
- Channel Length Scaling of MoS2 MOSFETs
- (2012) Han Liu et al. ACS Nano
- Metal/Metal-Oxide Interfaces: How Metal Contacts Affect the Work Function and Band Structure of MoO3
- (2012) Mark T. Greiner et al. ADVANCED FUNCTIONAL MATERIALS
- The Influence of Hydrogenation and Oxygen Vacancies on Molybdenum Oxides Work Function and Gap States for Application in Organic Optoelectronics
- (2012) Maria Vasilopoulou et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
- (2012) Hui Fang et al. NANO LETTERS
- Effects of confinement and environment on the electronic structure and exciton binding energy of MoS2from first principles
- (2012) Hannu-Pekka Komsa et al. PHYSICAL REVIEW B
- Electron tunneling through atomically flat and ultrathin hexagonal boron nitride
- (2011) Gwan-Hyoung Lee et al. APPLIED PHYSICS LETTERS
- How Good Can Monolayer MoS2Transistors Be?
- (2011) Youngki Yoon et al. NANO LETTERS
- Nanometre-scale electronics with III–V compound semiconductors
- (2011) Jesús A. del Alamo NATURE
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Theoretical and Experimental Study of the Electronic Structures of MoO3and MoO2
- (2010) David O. Scanlon et al. Journal of Physical Chemistry C
- Atomically ThinMoS2: A New Direct-Gap Semiconductor
- (2010) Kin Fai Mak et al. PHYSICAL REVIEW LETTERS
- Role of the deep-lying electronic states of MoO3 in the enhancement of hole-injection in organic thin films
- (2009) M. Kröger et al. APPLIED PHYSICS LETTERS
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now