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Title
Memory Impedance in TiO2 based Metal-Insulator-Metal Devices
Authors
Keywords
-
Journal
Scientific Reports
Volume 4, Issue 1, Pages -
Publisher
Springer Nature
Online
2014-03-31
DOI
10.1038/srep04522
References
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Related references
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- (2011) Leon Chua APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- AC conductance measurement and analysis of the conduction processes in HfOx based resistive switching memory
- (2011) Shimeng Yu et al. APPLIED PHYSICS LETTERS
- Pinched hysteretic loops of ideal memristors, memcapacitors and meminductors must be ‘self-crossing’
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- Memory materials: a unifying description
- (2011) Massimiliano Di Ventra et al. Materials Today
- Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
- (2011) Kyung Min Kim et al. NANOTECHNOLOGY
- Study on the electrical conduction mechanism of bipolar resistive switching TiO2 thin films using impedance spectroscopy
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- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
- (2010) Deok-Hwang Kwon et al. Nature Nanotechnology
- Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors
- (2009) Massimiliano Di Ventra et al. PROCEEDINGS OF THE IEEE
- The missing memristor found
- (2008) Dmitri B. Strukov et al. NATURE
- Resonant excitations of single and two-qubit systems coupled to a tank circuit
- (2008) S. N. Shevchenko et al. PHYSICAL REVIEW B
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