Two centuries of memristors

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Coexistence of Memristance and Negative Differential Resistance in a Nanoscale Metal-Oxide-Metal System

(2011) Matthew D. Pickett et al.   ADVANCED MATERIALS

Memory effects in complex materials and nanoscale systems

(2011) Yuriy V. Pershin et al.   ADVANCES IN PHYSICS

Resistance switching memories are memristors

(2011) Leon Chua   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Rate-Limiting Processes Determining the Switching Time in a Ag2S Atomic Switch

(2010) Alpana Nayak et al.   Journal of Physical Chemistry Letters

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Resistive Switching and Metallic-Filament Formation in Ag2S Nanowire Transistors

(2009) Zhi-Min Liao et al.   Small

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology