High Performance p-type SnO thin-film Transistor with SiOxGate Insulator Deposited by Low-Temperature PECVD Method

Title
High Performance p-type SnO thin-film Transistor with SiOxGate Insulator Deposited by Low-Temperature PECVD Method
Authors
Keywords
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Journal
Journal of Semiconductor Technology and Science
Volume 14, Issue 5, Pages 666-672
Publisher
The Institute of Electronics Engineers of Korea
Online
2014-11-29
DOI
10.5573/jsts.2014.14.5.666

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