High Performance p-type SnO thin-film Transistor with SiOxGate Insulator Deposited by Low-Temperature PECVD Method

标题
High Performance p-type SnO thin-film Transistor with SiOxGate Insulator Deposited by Low-Temperature PECVD Method
作者
关键词
-
出版物
Journal of Semiconductor Technology and Science
Volume 14, Issue 5, Pages 666-672
出版商
The Institute of Electronics Engineers of Korea
发表日期
2014-11-29
DOI
10.5573/jsts.2014.14.5.666

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