Rigorous Design of 22-nm Node 4-Terminal SOI FinFETs for Reliable Low Standby Power Operation with Semi-empirical Parameters

Published 2011 View Full Article

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Title
Rigorous Design of 22-nm Node 4-Terminal SOI FinFETs for Reliable Low Standby Power Operation with Semi-empirical Parameters
Authors
Keywords
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Journal
Journal of Semiconductor Technology and Science
Volume 10, Issue 4, Pages 265-275
Publisher
The Institute of Electronics Engineers of Korea
Online
2011-04-22
DOI
10.5573/jsts.2010.10.4.265
References
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