Rigorous Design of 22-nm Node 4-Terminal SOI FinFETs for Reliable Low Standby Power Operation with Semi-empirical Parameters

标题
Rigorous Design of 22-nm Node 4-Terminal SOI FinFETs for Reliable Low Standby Power Operation with Semi-empirical Parameters
作者
关键词
-
出版物
Journal of Semiconductor Technology and Science
Volume 10, Issue 4, Pages 265-275
出版商
The Institute of Electronics Engineers of Korea
发表日期
2011-04-22
DOI
10.5573/jsts.2010.10.4.265

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