AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique

Gate Recessed Quasi-Normally OFF Al2O3/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer

(2014)   IEEE ELECTRON DEVICE LETTERS

Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon

(2013) G. Ye et al.   APPLIED PHYSICS LETTERS

Mechanism of PEALD-Grown AlN Passivation for AlGaN/GaN HEMTs: Compensation of Interface Traps by Polarization Charges

(2013) Sen Huang et al.   IEEE ELECTRON DEVICE LETTERS

Atomic Layer Epitaxy AlN for Enhanced AlGaN/GaN HEMT Passivation

(2013) Andrew D. Koehler et al.   IEEE ELECTRON DEVICE LETTERS

AlGaN/GaN MISHEMTs With High-$\kappa \ \hbox{LaLuO}_{3}$ Gate Dielectric

(2012) Shu Yang et al.   IEEE ELECTRON DEVICE LETTERS

Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

(2012) Sen Huang et al.   IEEE ELECTRON DEVICE LETTERS

Enhanced AlGaN/GaN MOS-HEMT Performance by Using Hydrogen Peroxide Oxidation Technique

(2012) Han-Yin Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

(2012) Raymond S. Pengelly et al.   IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES

GaN Power Transistors on Si Substrates for Switching Applications

(2010) Nariaki Ikeda et al.   PROCEEDINGS OF THE IEEE

GaN-Based RF Power Devices and Amplifiers

(2008) U.K. Mishra et al.   PROCEEDINGS OF THE IEEE