Journal
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY
Volume 3, Issue 11, Pages 1826-1841Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCPMT.2013.2269273
Keywords
Compound systems; electronics cooling; GaN high electron mobility transistor (HEMT); heat conduction; heat spreaders; interfacial resistance; Kirchhoff transform; orthotropic properties; thermal boundary resistance (TBR); thermal spreading resistance
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Funding
- Natural Sciences and Engineering Research Council of Canada under the Discovery Grants Program
- MIT GaN Energy Initiative
- MIT-Singapore SMART LEES Program
- National Defense Science and Engineering Graduate Fellowship
- U.S. Air Force Office of Science and Research
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In this paper, a new and more general solution for thermal spreading resistance in compound, orthotropic systems with interfacial resistance is considered. This new solution, which extends beyond previously published results, is obtained for a finite rectangular heat source of uniform strength arbitrarily located on a rectangular substrate. By means of superposition, one can obtain the temperature field in the source plane for multiple heat sources as well as the source mean and centroid temperatures. By means of orthotropic transformations, systems containing orthotropic materials can be easily modeled. Extension of the present solutions using a computationally efficient influence coefficient method is also given, such that the effects of large numbers of heat sources are superimposed. The application of these closed-form expressions for the temperature rise is demonstrated with calculations for Gallium nitride (GaN) high electron mobility transistors (HEMTs). These solutions are shown to be more flexible than previously reported analytical expressions and much more computationally efficient than 3-D finite element analysis, especially for a large number of discrete heat sources associated with multifinger GaN HEMTs.
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