Hopping transport and the Hall effect near the insulator–metal transition in electrochemically gated poly(3-hexylthiophene) transistors

Title
Hopping transport and the Hall effect near the insulator–metal transition in electrochemically gated poly(3-hexylthiophene) transistors
Authors
Keywords
-
Journal
Nature Communications
Volume 3, Issue 1, Pages -
Publisher
Springer Nature
Online
2012-11-15
DOI
10.1038/ncomms2213

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