Ion Gel-Gated Polymer Thin-Film Transistors: Operating Mechanism and Characterization of Gate Dielectric Capacitance, Switching Speed, and Stability

Published 2009 View Full Article

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Title
Ion Gel-Gated Polymer Thin-Film Transistors: Operating Mechanism and Characterization of Gate Dielectric Capacitance, Switching Speed, and Stability
Authors
Keywords
-
Journal
Journal of Physical Chemistry C
Volume 113, Issue 20, Pages 8972-8981
Publisher
American Chemical Society (ACS)
Online
2009-04-24
DOI
10.1021/jp901426e

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