Advantages of AlGaN-Based 310-nm UV Light-Emitting Diodes With Al Content Graded AlGaN Electron Blocking Layers

出版年份 2013 全文链接

标题

作者

关键词

出版物

Volume 5, Issue 4, Pages 8200309-8200309

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2013-07-04

DOI

10.1109/jphot.2013.2271718

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