Void-free strong bonding of surface activated silicon wafers from room temperature to annealing at 600°C

标题
Void-free strong bonding of surface activated silicon wafers from room temperature to annealing at 600°C
作者
关键词
-
出版物
THIN SOLID FILMS
Volume 519, Issue 2, Pages 804-808
出版商
Elsevier BV
发表日期
2010-09-08
DOI
10.1016/j.tsf.2010.08.144

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