Improved properties of Pt–HfO2 gate insulator–ZnO semiconductor thin film structure by annealing of ZnO layer

Published 2010 View Full Article

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Title
Improved properties of Pt–HfO2 gate insulator–ZnO semiconductor thin film structure by annealing of ZnO layer
Authors
Keywords
-
Journal
THIN SOLID FILMS
Volume 518, Issue 18, Pages 5326-5330
Publisher
Elsevier BV
Online
2010-04-11
DOI
10.1016/j.tsf.2010.04.004

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