Improved properties of Pt–HfO2 gate insulator–ZnO semiconductor thin film structure by annealing of ZnO layer

标题
Improved properties of Pt–HfO2 gate insulator–ZnO semiconductor thin film structure by annealing of ZnO layer
作者
关键词
-
出版物
THIN SOLID FILMS
Volume 518, Issue 18, Pages 5326-5330
出版商
Elsevier BV
发表日期
2010-04-11
DOI
10.1016/j.tsf.2010.04.004

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