4.4 Article Proceedings Paper

Electric potential generated in ZnO nanowire due to piezoelectric effect

Journal

THIN SOLID FILMS
Volume 516, Issue 9, Pages 2708-2710

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2007.04.155

Keywords

polarization; strain; bending; curvature; piezoelectric effect

Ask authors/readers for more resources

When a zinc oxide (ZnO) nanowire is bent, polarization that is perpendicular to its c-axis (i.e. the longitudinal direction of the nanowire) will be induced due to the piezoelectric effect of ZnO crystal. In this paper, based on the theories of the piezoelectric effect and elasticity, we derive the relation between this polarization and the degree of bending, and calculate the potential of the electric field excited by this polarization. The result is in agreement with that of the experiment [Z.L. Wang, J.H. Song, Science 312 (2006) 242]. (c) 2007 Published by Elsevier B.V.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.4
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

Article Chemistry, Physical

Synergistic effect of bi-phased and self-doped Ti+3 on anodic TiO2 nanotubes photoelectrode for photoelectrochemical sensing

Khaled M. Chahrour, Poh Choon Ooi, A. M. Eid, Ahmed Abdel Nazeer, Metwally Madkour, Chang Fu Dee, M. F. Mohd Razip Wee, Azrul Azlan Hamzah

Summary: The introduction of crystalline phase change and Ti3+ self-doping improved the electronic conductivity and photoelectrochemical activity of anodic TiO2 nanotubes, enhancing the detection efficiency and selectivity of photoelectrochemical sensors.

JOURNAL OF ALLOYS AND COMPOUNDS (2022)

Article Chemistry, Physical

Cu ions irradiation-induced defects in graphene and their effects on optical properties

Shaikh Muhammad Jahanzaib, Abdul O. Jalil, Samson Aisida, Zhao Tingkai, Chang-Fu Dee, Michael Sorokin, Ishaq Ahmad, Anwar Ul-Hamid

Summary: The radiation-induced damage in graphene irradiated with 8-MeV Cu2+ ions at varying fluences was studied, showing an increase in point defects with ion fluence. The metallic nature of graphene was observed to transform into semiconducting at a critical stage, leading to a total conversion of the structure into a massively disordered layer with decreased optical absorption. Density function theory calculations supported the experimental results obtained from the study.

RADIATION PHYSICS AND CHEMISTRY (2022)

Article Engineering, Electrical & Electronic

Improvements of electrical and thermal characteristics for AlGaN/GaN HEMT grown by metal-organic chemical vapor deposition on silicon-on-insulator (SOI) substrate

Le Trung Hieu, Chung-Han Chiang, Deepak Anandan, Chang-Fu Dee, Azrul Azlan Hamzah, Ching-Ting Lee, Chung-Hsiung Lin, Edward Yi Chang

Summary: The electrical and thermal characteristics of AlGaN/GaN HEMT heterostructures grown on different substrates were investigated. It was found that the structure grown on SOI substrate exhibited better performance, with improved thermal-sensitive strain and reduced defect density, leading to enhanced temperature-dependence of the device.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2022)

Article Engineering, Electrical & Electronic

Effects of electrode materials on solution-processed polyvinylidene fluoride-based piezoelectric nanogenerators: Do they matter?

Yi Sheng Ng, Zhi Yong Yau, Poh Choon Ooi, Rahmat Zaki Auliya, Thiresamary Kurian, Mengying Xie, Sin Tee Tan, Yew Hoong Wong, Muhammad Aniq Shazni Mohammad Haniff, Wee Chen Gan, Chun Hui Tan, Sameer Al-Bati, Khatatbeh Ibtehaj, Azrul Azlan Hamzah, Chang Fu Dee

Summary: This study finds that the choice of electrode materials has an insignificant impact on the electrical output performance of PVDF-based PENGs. However, tuning the PVDF impedance by introducing 2D MXene nanofillers could be a useful approach to improve the performance.

SOLID-STATE ELECTRONICS (2022)

Article Materials Science, Multidisciplinary

Growth of ultrathin barrier InAlGaN/GaN heterostructures with superior properties using sputtered AlN/sapphire templates and optimized group-III injection rate by metalorganic chemical vapor phase deposition

Xia-Xi Zheng, Chun Wang, Jian-Hao Huang, Jen-Yao Huang, Daisuke Ueda, Krishna Pande, Chang Fu Dee, Ching Ting Lee, Edward-Yi Chang

Summary: This paper investigates the influence of group-III precursor injection rate on the material and electrical properties of InAlGaN/GaN heterostructures grown by Metalorganic Chemical Vapor Phase Deposition. It is demonstrated that high-quality GaN layers can be achieved by using the sputtered AlN/sapphire templates and optimized group-III injection rate, while maintaining high crystallinity and smooth surface of InAlGaN barrier layer.

THIN SOLID FILMS (2022)

Article Materials Science, Multidisciplinary

Enhancement-Mode High-Frequency InAlGaN/GaN MIS-HEMT Fabricated by Implementing Oxygen-Based Digital Etching on the Quaternary Layer

Ping-Yu Tsai, Hoang-Tan-Ngoc Nguyen, Venkatesan Nagarajan, Chun-Hsiung Lin, Chang-Fu Dee, Shih-Chen Chen, Hao-Chung Kuo, Ching-Ting Lee, Edward Yi Chang

Summary: A high frequency enhancement mode quaternary InAlGaN/GaN MIS-HEMT with a recessed gate was fabricated using an oxygen-based digital etching technique. The threshold voltage of the device can be adjusted over a wide range using the digital etching technique, and the etch rate can be controlled with high flexibility. The fabricated device exhibits high performance.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2022)

Article Materials Science, Biomaterials

Lifting the Veil: Characteristics, Clinical Significance, and Application of β-2-Microglobulin as Biomarkers and Its Detection with Biosensors

P. C. Sivanathan, Kai Shen Ooi, Muhammad Aniq Shazni Mohammad Haniff, Mohsen Ahmadipour, Chang Fu Dee, Norfilza Mohd Mokhtar, Azrul Azlan Hamzah, Edward Y. Chang

Summary: Beta-2-microglobulin (beta M-2) is widely used to detect and evaluate various diseases due to its important role in the human immune system and kidney function. Recent studies have shown that biosensors can be used for simple, rapid, and reliable quantification of beta M-2, overcoming the limitations of sophisticated detection methods.

ACS BIOMATERIALS SCIENCE & ENGINEERING (2022)

Review Engineering, Electrical & Electronic

Detection of breath acetone by semiconductor metal oxide nanostructures-based gas sensors: A review

Mohsen Ahmadipour, Ai Ling Pang, Mohammad Rezaei Ardani, Swee-Yong Pung, Poh Choon Ooi, Azrul Azlan Hamzah, M. F. Mohd Razip Wee, Muhammad Aniq Shazni Mohammad Haniff, Chang Fu Dee, Ebrahim Mahmoudi, Agus Arsad, Muhammad Zamharir Ahmad, Ujjwal Pal, Khaled M. Chahrour, Seyyed Arash Haddadi

Summary: Currently, analyzing the acetone concentration in exhaled breath has become an appealing and non-invasive approach for detecting diabetes mellitus. With the advancements in gas sensors, this method shows potential for clinical applications.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2022)

Article Materials Science, Coatings & Films

Nucleation and growth mechanism for atomic layer deposition of Al2O3 on two-dimensional WS2 monolayer

Tsu-Ting Lee, Kashi Chiranjeevulu, Sireesha Pedaballi, Daire Cott, Annelies Delabie, Chang-Fu Dee, Edward Yi Chang

Summary: In this study, the nucleation, growth, and development of Al2O3 atomic layer deposition (ALD) on a polycrystalline WS2 monolayer created by metal-organic chemical vapor deposition (MOCVD) were investigated. The results provide insights into the intrinsic reactivity of WS2 and the influence of ALD on the growth of WS2, which are crucial for further exploration of the structure and properties of TMD monolayers.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2023)

Article Engineering, Electrical & Electronic

A Tall Gate Stem GaN HEMT With Improved Power Density and Efficiency at Ka-Band

Ping-Hsun Lee, Yueh-Chin Lin, Heng-Tung Hsu, Yi-Fan Tsao, Chang-Fu Dee, Pin Su, Edward Yi Chang

Summary: In this study, tall-gate-stem structures were used to improve the power performance of AlGaN/GaN HEMTs in the Ka-band. A film thinning process was also adopted to reduce parasitic capacitance. The results showed that devices with tall-gate-stem structures and film thinning process had higher cut-off frequency and maximum oscillation frequency values with lower parasitic capacitance. Load-pull measurement results demonstrated improved output power density and power added efficiency for the AlGaN/GaN HEMT with a tall gate stem at Ka-band.

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2023)

Article Chemistry, Analytical

Surface Acoustic Wave Propagation of GaN/Sapphire Integrated with a Gold Guiding Layer

Muhammad Musoddiq Jaafar, Mohd Farhanulhakim Mohd Razip Wee, Hoang-Tan-Ngoc Nguyen, Le Trung Hieu, Rahul Rai, Ashish Kumar Sahoo, Chang Fu Dee, Edward Yi Chang, Burhanuddin Yeop Majlis, Clarence Augustine T. H. Tee

Summary: This study investigated the effect of a titanium/gold guiding layer on the surface acoustic wave propagation of GaN/sapphire substrate. It was found that the guiding layer could transform the propagation modes, act as a sensing layer for biomolecule binding, and influence the output signal in terms of frequency or velocity. The GaN/sapphire device integrated with a guiding layer could potentially be used as a biosensor and in wireless telecommunication applications.

SENSORS (2023)

Article Chemistry, Physical

Role of Boron in Assisting the Super-Enhancement of Emissions from Carbon-Implanted Silicon

Nurul Ellena Abdul Razak, Chang Fu Dee, Morgan Madhuku, Ishaq Ahmad, Edward Yi Chang, Hung Wei Yu, Burhanuddin Yeop Majlis, Dilla Duryha Berhanuddin

Summary: The study shows that the luminescence at silicon band edge is greatly enhanced when co-implanted with boron and carbon. The role of boron in band edge emissions in silicon was investigated by introducing defects into the lattice structures. The aim was to increase the light emission intensity from silicon by boron implantation, resulting in the formation of dislocation loops. Photoluminescence measurements were performed to observe the emissions in the near-infrared region. Two main peaks were observed at approximately 1112 and 1170 nm in the samples incorporated with boron, with significantly higher intensities compared to pristine silicon samples.

MATERIALS (2023)

Article Chemistry, Analytical

Geometrical Characterisation of TiO2-rGO Field-Effect Transistor as a Platform for Biosensing Applications

Anis Amirah Alim, Roharsyafinaz Roslan, Sh. Nadzirah, Lina Khalida Saidi, P. Susthitha Menon, Ismail Aziah, Dee Chang Fu, Siti Aishah Sulaiman, Nor Azian Abdul Murad, Azrul Azlan Hamzah

Summary: This study focuses on the performance of a graphene-based field-effect transistor (FET) as a biosensor. A top-gate FET with a titanium dioxide-reduced graphene oxide (TiO2-rGO) nanocomposite as the transducer material was developed using the finite element method. Taguchi mixed-level method was used to design 18 3D models, investigating the effects of various factors on the device performance. The results showed that the channel length had the most significant impact on the drain current (I-d) value.

MICROMACHINES (2023)

Article Engineering, Electrical & Electronic

Over 10W/mm High Power Density AlGaN/GaN HEMTs With Small Gate Length by the Stepper Lithography for Ka-Band Applications

Ming-Wen Lee, Yueh-Chin Lin, Po-Sheng Chang, Yi-Fan Tsao, Heng-Tung Hsu, Chang-Fu Dee, Edward Yi Chang

Summary: This study presents the fabrication of AlGaN/GaN high-electron-mobility transistors (HEMTs) using Stepper Lithography on a 4-inch wafer for Ka-Band applications. A small gate length of 100 nm was achieved through a 2-Step Photolithography Process, and the gate region of the AlGaN/GaN HEMT was defined using two lithography steps to form gamma-shaped gates. The results demonstrate high electrical performance uniformity and excellent RF performance, indicating the potential of AlGaN/GaN HEMT fabrication with high yield for 5G applications using Stepper Lithography.

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2023)

Article Chemistry, Multidisciplinary

CuO/Cu/rGO nanocomposite anodic titania nanotubes for boosted non-enzymatic glucose biosensors

Khaled M. Chahrour, Poh Choon Ooi, Ahmed Abdel Nazeer, Latifa A. Al-Hajji, Peverga R. Jubu, Chang Fu Dee, Mohsen Ahmadipour, Azrul Azlan Hamzah

Summary: Highly arranged porous anodic titania nanotube arrays were fabricated through anodization, followed by decoration of CuO/Cu nanoparticles and impregnation into graphene oxide aqueous solution to produce CuO/Cu/GO-ATNT. The resulting CuO/Cu/rGO nanocomposite ATNT electrode showed superior electro-catalytic performance for non-enzymatic glucose sensing. The electrode exhibited high sensitivity, low detection limit, wide linear range, stability, reproducibility, and selectivity. Rating: 9/10.

NEW JOURNAL OF CHEMISTRY (2023)

No Data Available