Journal
SURFACE SCIENCE
Volume 605, Issue 13-14, Pages 1147-1156Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.susc.2011.03.001
Keywords
Chemical vapor deposition; Synchrotron radiation photoelectron spectroscopy; X-ray absorption spectroscopy; Scanning tunneling microscopy; Growth; Titanium dioxide; Low index single crystal surfaces; Crystalline-amorphous interfaces
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Funding
- Swedish Science Council (VR)
- Crafoord Foundation
- Goran Gustafsson Foundation
- Swedish Foundation for Strategic Research (SSF)
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The interaction between the metal organic precursor molecule titanium(IV) isopropoxide (TTIP) and three different surfaces has been studied: Si(111)-(7 x 7), SiOx/Si(111) and TiO2. These surfaces represent the different surface compositions encountered during TTIP mediated TiO2 chemical vapor deposition on Si(111). The surface chemistry of the titanium(IV) isopropoxide precursor and the film growth have been explored by core level photoelectron spectroscopy and x-ray absorption spectroscopy using synchrotron radiation. The resulting film morphology has been imaged with scanning tunneling microscopy. The growth rate depends on both surface temperature and surface composition. The behavior can be rationalized in terms of the surface stability of isopropoxy and isopropyl groups, confirming that growth at 573 K is a reaction limited process. (C) 2011 Elsevier B.V. All rights reserved.
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