Isotopic comparative method (ICM) for the determination of variations of the ion yields in boron-doped silicon as a function of oxygen concentration in the 0-10 at.% range

Title
Isotopic comparative method (ICM) for the determination of variations of the ion yields in boron-doped silicon as a function of oxygen concentration in the 0-10 at.% range
Authors
Keywords
-
Journal
SURFACE AND INTERFACE ANALYSIS
Volume 43, Issue 1-2, Pages 137-140
Publisher
Wiley
Online
2010-07-21
DOI
10.1002/sia.3657

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