Journal
SURFACE & COATINGS TECHNOLOGY
Volume 232, Issue -, Pages 497-503Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.surfcoat.2013.06.008
Keywords
YSZ thin film; RF sputtering; Oxygen\argon ratio; Coated conductor
Funding
- ITER Plan Project
- Shanghai Science and Technology Committee
- National science and technology and Shanghai youth science and technology the phosphor plan (tracking)
- Graduate student innovation ability training special fund projects
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Yttria-stabilized zirconia (YSZ) films are deposited on CeO2/NiW tapes by RF sputtering for (Gd) BCO-coated conductors. Surface morphology and texture developments are investigated as the O-2 : Ar ratio and sputtering power increase. Both the grain size and the roughness of YSZ films increase as sputtering power increases. A simple model proposed by Bartelt et al. is used to explain the results. The strain relaxation mechanism plays a major role in the sudden increase in roughness for YSZ film deposited at a sputtering power of 50 W. It is observed that low O-2 : Ar ratio favors the growth of (200) orientation for YSZ film, while high O-2 : Ar ratio favors the growth of (111) orientation. The preferential orientation (200) of the YSZ film with low O-2 : Ar ratio arises from template effect of CeO2 buffer layer. The (111) orientation of YSZ film with high O-2 : Ar ratio is due to thermodynamic mechanism aiming for the lowest surface energy. The grain size and roughness of our optimal YSZ film are 10-15 nm and 0.7 nm, respectively. The out-of-plane texture of our optimal YSZ film is 4.05 degrees. The in-plane texture is 6.35 degrees. The plan view and cross-section SEM images of YSZ films on CeO2/NiW tapes show a flat, dense and no micro-cracks morphology. Based on these results, (Gd) BCO films are deposited by RE sputtering, achieving self-field J(c) of 4.0 MA/cm(2) at 77 K. (C) 2013 Elsevier B.V. All rights reserved.
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