Journal
SURFACE & COATINGS TECHNOLOGY
Volume 229, Issue -, Pages 12-17Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.surfcoat.2012.08.058
Keywords
Plasma polymerization; Hexamethyldisiloxane; RF discharge; Compressive stress
Funding
- Thailand Research Fund (TRF) [MRG5380224]
- Thailand Center of Excellence in Physics (ThEP)
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In this work we present the influence of carrier gases in the deposition of low-pressure discharge plasma of hexamethyldisiloxane (HMDSO). Plasma polymerized HMDSO films were deposited with an inductively-coupled discharge reactor using Ar and O-2 as carrier gases. The films deposited in Ar contained polymeric structure in the form of SiOxCyHz and could significantly improve the barrier to water vapor of poly(lactic add) (PLA). The SiOx-like structure of HMDSO films was obtained when using O-2 as the carrier gas. However, the films supported some state of residual stress leading to film failures and a significant loss of barrier performance of PLA. The formation of organic and inorganic contents in the films was confirmed by X-ray photoelectron spectroscopy (XPS). The discharge power had an effect on the topography of the films. Rough surface with coarse texture was obtained when the process was done in Ar at high discharge powers. On the other hand, the deposition process in O-2 induced smoother surface of plasma-polymerized films. (C) 2012 Elsevier B.V. All rights reserved.
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