Journal
SURFACE & COATINGS TECHNOLOGY
Volume 206, Issue 19-20, Pages 3851-3856Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.surfcoat.2012.01.065
Keywords
Thin films; Phase formation; Activation energy; Resistivity; Aluminum; Copper
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This work is an investigation on the phase formation in Al-Cu thin film systems. This investigation was carried out on eight samples with different Cu/Al thickness ratios (0.29, 0.56, 0.71, 0.87, 1.07, 1.26, 1.58 and 2.38). The corresponding compositions of these samples are 29, 44, 50, 55, 60, 64, 69 and 77 at.% Cu. The samples were prepared by sputtering and characterized using in situ resistance measurements, and in-situ X-ray Diffraction (XRD). The sequence of phase formation was evidenced from this study. In addition, the energies of activation of Al2Cu and Al4Cu9 were calculated using simulations of the XRD and resistivity results, and the resistivity values of AlCu, Al2Cu3 and Al4Cu9 were determined at room temperature. (c) 2012 Elsevier B.V. All rights reserved.
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