Journal
SURFACE & COATINGS TECHNOLOGY
Volume 203, Issue 10-11, Pages 1452-1456Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.surfcoat.2008.11.021
Keywords
Cubic boron nitride; Stress relaxation; Ion beam assisted deposition; Fourier transformed infrared spectroscopy
Funding
- 863 project of China [2006AA03Z306]
- National Natural Science Foundation of China [50601025]
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Cubic boron nitride (c-BN) films were prepared by ion beam assisted deposition (IBAD) technique, and the stresses were primary estimated by measuring the frequency shifts in the infrared-absorption peaks of c-BN samples. To test the possible effects of other factors, dependencies of the c-BN transversal optical mode position on film thickness and c-BN content were investigated. Several methods for reducing the stress of c-BN films including annealing, high temperature deposition, two-stage process, and the addition of a small amount of Si were studied, in which the c-BN films with similar thickness and cubic phase content were used to evaluate the effects of the various stress relief methods. It was shown that all the methods can reduce the stress in c-BN films to various extents. Especially, the incorporation of a small amount of Si (2.3 at.%) can result in a remarkable stress relief from 8.4 to similar to 3.6 GPa whereas the c-BN content is nearly unaffected, although a slight degradation of the c-BN crystallinity is observed. The stress can be further reduced down below I GPa by combination of the addition of Si with the two-stage deposition process. (c) 2008 Elsevier B.V. All rights reserved.
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