Journal
SURFACE & COATINGS TECHNOLOGY
Volume 202, Issue 13, Pages 2844-2849Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.surfcoat.2007.10.020
Keywords
flexible display; plastic substrate; poly(ether sulfone); gas barrier; silicon oxynitride; undercoat
Funding
- Ministry of Education, Science & Technology (MoST), Republic of Korea [2E20080] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [과C6A2001] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Thin silicon oxynitride (SiOxNy) has been deposited for a gas barrier layer on the surface of poly(ether sulfone) film using plasma-enhanced chemical vapor deposition (PECVD) of a mixture of hexamethyldisiloxane (HMDSO) and ammonia. The chemical structure of the deposited layer varied from organic to inorganic structures depending on RF plasma input power applied to the reaction system. A silicon-based undercoat layer, which has an organic/inorganic hybrid structure, was used as an interfacial buffer layer between the organic PES and inorganic SiOxNy layer. With the help of the undercoat layer, the dense inorganic SiOxNy layer gave a superior oxygen barrier property of 0.2 cm(3)/m(2) day at a critical coating thickness of ca. 20 nm. In a highly stressed SiOxNy film, the effect of the undercoat layer was remarkable in preventing crack formation during bending tests. (C) 2007 Elsevier B.V. All rights reserved.
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