Addition of HfO2 interface layer for improved synaptic performance of phase change memory (PCM) devices

Published 2012 View Full Article

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Title
Addition of HfO2 interface layer for improved synaptic performance of phase change memory (PCM) devices
Authors
Keywords
-
Journal
SOLID-STATE ELECTRONICS
Volume 79, Issue -, Pages 227-232
Publisher
Elsevier BV
Online
2012-10-17
DOI
10.1016/j.sse.2012.09.006

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