Addition of HfO2 interface layer for improved synaptic performance of phase change memory (PCM) devices

标题
Addition of HfO2 interface layer for improved synaptic performance of phase change memory (PCM) devices
作者
关键词
-
出版物
SOLID-STATE ELECTRONICS
Volume 79, Issue -, Pages 227-232
出版商
Elsevier BV
发表日期
2012-10-17
DOI
10.1016/j.sse.2012.09.006

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