Journal
SOLID STATE IONICS
Volume 192, Issue 1, Pages 693-698Publisher
ELSEVIER
DOI: 10.1016/j.ssi.2010.07.021
Keywords
Titanium oxynitrides; Thin films; Impedance spectroscopy; Rutherford backscattering
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Titanium oxynitride TiNxOy thin films have been deposited by DC-pulsed magnetron sputtering from Ti target in the Ar+N-2+O-2 reactive atmosphere controlled by plasma emission spectroscopy. Correlation between chemical composition and crystallographic structure of thin films has been determined and presented in the form of the pseudo-equilibrium ternary phase diagram. The atomic N/Ti and O/Ti ratios have been derived from Rutherford backscattering (RBS) measurements. X-ray diffraction at grazing incidence has revealed formation of defective TiN-TiO solid solutions. The surface roughness estimated from atomic force microscopy (AFM) surface images decreases with increasing oxygen content in the films, in accordance with the progressive sample amorphisation. Impedance spectroscopy measurements indicate that the electrical conductivity changes its character from metallic to semiconducting with increasing oxygen content in TiNxOy thin films. (C) 2010 Elsevier B.V. All rights reserved.
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