4.8 Article

Low Threshold Fabry-Perot Mode Lasing from Lead Iodide Trapezoidal Nanoplatelets

Journal

SMALL
Volume 14, Issue 35, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201801938

Keywords

layered semiconductor; microcavity; PbI2; small laser; van der Waals epitaxy

Funding

  1. Ministry of Science and Technology [2016YFA0200700, 2017YFA0205004, 2017YFA0304600, 2017YFA0205700]
  2. Natural Science Foundation of China [61774003, 51502007, 51672007]
  3. Peking University
  4. National Natural Science Foundation of China [21673054]
  5. Key Research Program of Frontier Science, CAS [QYZDB-SSW-SYS031]
  6. Macau Science and Technology Development Fund [FDCT-116/2016/A3, FDCT-091/2017/A2]
  7. University of Macau [SRG2016-00087-FST, MYRG2018-00148-IAPME]
  8. 2011 Program Peking-Tsinghua-IOP Collaborative Innovation Center of Quantum Matter
  9. one-thousand talent programs from Chinese government
  10. open research fund program of the state key laboratory of low-dimensional quantum physics

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Lead Iodide (PbI2) is a layered semiconductor with direct band gap holding great promises in green light emission and detection devices. Recently, PbI2 planar lasers are demonstrated using hexagonal whispering-gallery-mode microcavities, but the lasing threshold is quite high. In this work, lasing from vapor phase deposition derived PbI2 trapezoidal nanoplatelets (NPs) with threshold that is at least an order of magnitude lower than the previous value is reported. The growth mechanism of the trapezoidal NPs is explored and attributed to the synergistic effects of van der Waals interactions and lattice mismatching. The lasing is enabled by the population inversion of n = 1 excitons and the optical feedback is provided by the Fabry-Perot oscillation between the side facets of trapezoidal NPs. The findings not only advance the understanding of growth and photophysics mechanism of PbI2 nanostructures but also provide ideas to develop low threshold ultrathin lasers.

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