☆ 4.8 Article

Silicon Nanowire Charge-Trap Memory Incorporating Self-Assembled Iron Oxide Quantum Dots

SMALL (2012)

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Journal

SMALL
Volume 8, Issue 22, Pages 3417-3421

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201200940

Keywords

Fowler-Nordheim tunneling; semiconductor quantum dots; non-volatile memory devices; silicon nanowires; self-assembly

Categories

Chemistry, Multidisciplinary Chemistry, Physical Nanoscience & Nanotechnology Materials Science, Multidisciplinary Physics, Applied Physics, Condensed Matter

Funding

  1. Department of Energy, Basic Energy Sciences [DE-FG03-01ER46175]

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