Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

标题
Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer
作者
关键词
-
出版物
Scientific Reports
Volume 5, Issue 1, Pages -
出版商
Springer Nature
发表日期
2015-04-20
DOI
10.1038/srep09617

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