Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs

Title
Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs
Authors
Keywords
-
Journal
SENSORS
Volume 9, Issue 4, Pages 2746-2759
Publisher
MDPI AG
Online
2009-04-17
DOI
10.3390/s90402746

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