A CMOS-Compatible, Low-Noise ISFET Based on High Efficiency Ion-Modulated Lateral-Bipolar Conduction

Published 2009 View Full Article

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Title
A CMOS-Compatible, Low-Noise ISFET Based on High Efficiency Ion-Modulated Lateral-Bipolar Conduction
Authors
Keywords
-
Journal
SENSORS
Volume 9, Issue 10, Pages 8336-8348
Publisher
MDPI AG
Online
2009-10-21
DOI
10.3390/s91008336
References
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