A CMOS-Compatible, Low-Noise ISFET Based on High Efficiency Ion-Modulated Lateral-Bipolar Conduction

标题
A CMOS-Compatible, Low-Noise ISFET Based on High Efficiency Ion-Modulated Lateral-Bipolar Conduction
作者
关键词
-
出版物
SENSORS
Volume 9, Issue 10, Pages 8336-8348
出版商
MDPI AG
发表日期
2009-10-21
DOI
10.3390/s91008336

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