A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures

Published 2013 View Full Article

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Title
A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures
Authors
Keywords
Versus Characteristic, Minority Carrier, Solid State Electron, Quasi Fermi Level, Flat Band Voltage
Journal
SEMICONDUCTORS
Volume 47, Issue 5, Pages 686-694
Publisher
Pleiades Publishing Ltd
Online
2013-05-08
DOI
10.1134/s1063782613050230
References
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