Electron tunneling in MIS capacitors with the MBE-grown fluoride layers on Si(111) and Ge(111): Role of transverse momentum conservation

Published 2011 View Full Article

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Title
Electron tunneling in MIS capacitors with the MBE-grown fluoride layers on Si(111) and Ge(111): Role of transverse momentum conservation
Authors
Keywords
-
Journal
MICROELECTRONIC ENGINEERING
Volume 88, Issue 7, Pages 1291-1294
Publisher
Elsevier BV
Online
2011-04-15
DOI
10.1016/j.mee.2011.03.079

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