Pyroelectric properties of AlN wide-gap semiconductor in the temperature range of 4.2–300 K

Title
Pyroelectric properties of AlN wide-gap semiconductor in the temperature range of 4.2–300 K
Authors
Keywords
-
Journal
SEMICONDUCTORS
Volume 45, Issue 9, Pages 1117-1123
Publisher
Pleiades Publishing Ltd
Online
2011-09-16
DOI
10.1134/s106378261109017x

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