Pyroelectric properties of AlN wide-gap semiconductor in the temperature range of 4.2–300 K

标题
Pyroelectric properties of AlN wide-gap semiconductor in the temperature range of 4.2–300 K
作者
关键词
-
出版物
SEMICONDUCTORS
Volume 45, Issue 9, Pages 1117-1123
出版商
Pleiades Publishing Ltd
发表日期
2011-09-16
DOI
10.1134/s106378261109017x

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