InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers

High power, continuous wave, room temperature operation of λ ∼ 3.4 μm and λ ∼ 3.55 μm InP-based quantum cascade lasers

(2012) N. Bandyopadhyay et al.   APPLIED PHYSICS LETTERS

Room-temperature 3.73 µm GaSb-based type-I quantum-well lasers with quinternary barriers

(2012) Kristijonas Vizbaras et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Mid-IR Type-II Interband Cascade Lasers

(2011) Igor Vurgaftman et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Strain relief at the GaSb/GaAs interface versus substrate surface treatment and AlSb interlayers thickness

(2011) Y. Wang et al.   JOURNAL OF APPLIED PHYSICS

Semiconductor Quantum Dot Lasers: A Tutorial

(2010) James J. Coleman et al.   JOURNAL OF LIGHTWAVE TECHNOLOGY

Photoluminescence of InAs0.926Sb0.063N0.011/InAs multi-quantum wells in the mid-infrared spectral range

(2010) M de la Mare et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers

(2010) Ruiting Hao et al.   THIN SOLID FILMS

Interfacial misfit array formation for GaSb growth on GaAs

(2009) Shenghong Huang et al.   JOURNAL OF APPLIED PHYSICS

Type-IIInAsxSb1−x/InAsquantum dots for midinfrared applications: Effect of morphology and composition on electronic and optical properties

(2009) G. H. Yeap et al.   PHYSICAL REVIEW B

Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes

(2008) P. J. Carrington et al.   APPLIED PHYSICS LETTERS

InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications

(2008) P.J. Carrington et al.   MICROELECTRONICS JOURNAL

The development of room temperature LEDs and lasers for the mid-infrared spectral range

(2008) A. Krier et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE