Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 29, Issue 7, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/29/7/075002
Keywords
GaN; p-channel; HFET; HEMT; FET; C-V measurements; I-V measurements
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Funding
- DFG
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The interest in GaN for logic applications is increasing. With complementary logic architectures requiring the lowest power consumption, the need for GaN-based p-channel transistors is growing. Yet, the knowledge and the maturity of p-channel devices is far behind those of their n-channel counterparts. By analysing p-channel transistors with a high ON/OFF ratio and a low subthreshold swing under elevated temperatures, we attempt to improve this situation. This is the first report on transistor operation at temperatures as high as 175 degrees C.
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