期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 29, 期 7, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/29/7/075002
关键词
GaN; p-channel; HFET; HEMT; FET; C-V measurements; I-V measurements
类别
资金
- DFG
The interest in GaN for logic applications is increasing. With complementary logic architectures requiring the lowest power consumption, the need for GaN-based p-channel transistors is growing. Yet, the knowledge and the maturity of p-channel devices is far behind those of their n-channel counterparts. By analysing p-channel transistors with a high ON/OFF ratio and a low subthreshold swing under elevated temperatures, we attempt to improve this situation. This is the first report on transistor operation at temperatures as high as 175 degrees C.
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