Atomic layer deposition of high-permittivity TiO2dielectrics with low leakage current on RuO2in TiCl4-based processes

Title
Atomic layer deposition of high-permittivity TiO2dielectrics with low leakage current on RuO2in TiCl4-based processes
Authors
Keywords
-
Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 27, Issue 7, Pages 074007
Publisher
IOP Publishing
Online
2012-06-23
DOI
10.1088/0268-1242/27/7/074007

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