Atomic layer deposition of high-permittivity TiO2dielectrics with low leakage current on RuO2in TiCl4-based processes

出版年份 2012 全文链接

标题

Atomic layer deposition of high-permittivity TiO2dielectrics with low leakage current on RuO2in TiCl4-based processes

作者

关键词

-

出版物

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Volume 27, Issue 7, Pages 074007

出版商

IOP Publishing

发表日期

2012-06-23

DOI

10.1088/0268-1242/27/7/074007

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