Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate

Published 2010 View Full Article

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Title
Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate
Authors
Keywords
-
Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 26, Issue 2, Pages 022002
Publisher
IOP Publishing
Online
2010-12-25
DOI
10.1088/0268-1242/26/2/022002

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