期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 26, 期 2, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/26/2/022002
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资金
- National Science Foundation through North Carolina State University's FREEDM Systems Center
Vertical Schottky diodes were fabricated on the bulk GaN substrate with decreasing impurity concentration from N-face to Ga-face. An array of circular Pt Schottky contacts and a full backside Ti/Al/Ni/Au ohmic contact were prepared on the Ga-face and the N-face of the n-GaN substrate, respectively. The Schottky diode exhibits a minimum specific on-state resistance of 1.3 m Omega cm(2) and a maximum breakdown voltage of 600 V, resulting in a figure-of-merit of 275 MW cm(-2). An ultra-low reverse leakage current density of 3.7 x 10(-4) A cm(-2) at reverse bias of 400 V was observed. Temperature-dependent I-V measurements were also carried out to study the forward and reverse transportation mechanisms.
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