Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis
出版年份 2015 全文链接
标题
Evidence of Filamentary Switching in Oxide-based Memory Devices via Weak Programming and Retention Failure Analysis
作者
关键词
-
出版物
Scientific Reports
Volume 5, Issue 1, Pages -
出版商
Springer Nature
发表日期
2015-09-01
DOI
10.1038/srep13599
参考文献
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