SILC decay in La2O3 gate dielectrics grown on Ge substrates subjected to constant voltage stress

Published 2010 View Full Article

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Title
SILC decay in La2O3 gate dielectrics grown on Ge substrates subjected to constant voltage stress
Authors
Keywords
-
Journal
SOLID-STATE ELECTRONICS
Volume 54, Issue 9, Pages 979-984
Publisher
Elsevier BV
Online
2010-05-24
DOI
10.1016/j.sse.2010.04.023

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